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Document Number: 93182
2 Revision: 14-May-08
SD853C..S50K Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 990 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
SD853C..S50K
30 3000 3100
100
36 3600 3700
40 4000 4100
45 4500 4600
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at heatsink temperature
I
F(AV)
180° conduction, half sine wave
Double side (single side) cooled
990 (420) A
55 (85) °C
Maximum RMS forward current I
F(RMS)
25 °C heatsink temperature double side cooled 1800
A
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
19 000
t = 8.3 ms 19 900
t = 10 ms
50 % V
RRM
reapplied
16 000
t = 8.3 ms 16 750
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
1805
kA
2
s
t = 8.3 ms 1645
t = 10 ms
50 % V
RRM
reapplied
1280
t = 8.3 ms 1165
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 18 050 kA
2
√s
Low level value of threshold voltage V
F(TO)1
(16.7 % x π x I
F(AV)
< I < π x I
F(AV)
), T
J
= T
J
maximum 1.50
V
High level value of threshold voltage V
F(TO)2
(I > π x I
F(AV)
), T
J
= T
J
maximum 1.67
Low level value of forward
slope resistance
r
f1
(16.7 % x π x I
F(AV)
< I < π x I
F(AV)
), T
J
= T
J
maximum 0.70
mΩ
High level value of forward
slope resistance
r
f2
(I > π x I
F(AV)
), T
J
= T
J
maximum 0.65
Maximum forward voltage drop V
FM
I
pk
= 2000 A, T
J
= 125 °C;
t
p
= 10 ms sinusoidal wave
2.90 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT T
J
= 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT T
J
= 125 °C
t
rr
AT 25 % I
RRM
(µs)
I
pk
SQUARE
PULSE
(A)
dI/dt
(A/µs)
V
r
(V)
t
rr
AT 25 % I
RRM
(µs)
Q
rr
(µC)
I
rr
(A)
S50 5.0 1000 100 - 50 6.5 1000 270
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
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